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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT80 UHF power transistor
Product specification Supersedes data of May 1992 1996 May 09
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * SMD encapsulation * Gold metallization ensures excellent reliability. APPLICATIONS * Hand-held radio equipment in the 900 MHz communication band.
b
handbook, halfpage
BLT80
4 c
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package.
1 2 3 e
MAM043 - 1
PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector DESCRIPTION emitter
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.5 PL (W) 0.8 Gp (dB) 6 C (%) 60
1996 May 09
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation storage temperature operating junction temperature f > 1 MHz Ts = 131 C; note 1 open base open collector CONDITIONS open emitter - - - - - - - -65 - MIN. MAX. 20 10 3 250 250 750 2 +150 175
BLT80
UNIT V V V mA mA mA W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS Ptot = 2 W; Ts = 131 C; note 1 Ptot = 2 W; Tamb = 25 C; note 2 VALUE 22 85 UNIT K/W K/W
Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 x 40 x 1 mm, collector pad 35 x 17 mm.
handbook, halfpage
1
MRA780 - 1
IC (A)
10-1
10-2 1 10 VCE (V) 102
Ts = 131 C.
Fig.2 DC SOAR.
1996 May 09
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Measured under pulsed conditions: tp 200 s; 0.02. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 2.5 mA open base; IC = 5 mA open collector; IE = 0.5 mA VCE = 10 V; VBE = 0 VCE = 5 V; IC = 150 mA; note 1; see Fig.3 VCB = 7.5 V; IE = ie = 0; f = 1 MHz; see Fig.4 VCE = 7.5 V; IC = 0; f = 1 MHz MIN. 20 10 3 - 25 - - - - - 0.1 - 3.5 2.5 MAX.
BLT80
UNIT V V V mA
pF pF
handbook, halfpage
100
MRA776
MRA773
5 handbook, halfpage Cc (pF) 4
hFE 80
60
3
40
2
20
1
0 0 200 400 600 IC (mA) 800
0 0 4 8 12 16 20 VCB (V)
VCE = 7.5 V; tp 200 s; 0.02; Tj = 25 C.
IE = ie = 0; f = 1 MHz; Tj = 25 C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
1996 May 09
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION CW, class-B narrow band Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation f (MHz) 900 VCE (V) 7.5 PL (W) 0.8 Gp (dB) 6 typ. 8
BLT80
C (%) 60 typ. 67
The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 9 V; PL = 0.8 W; Ts 60 C.
MRA774
handbook, 10 halfpage
Gp (dB) 8
Gp
100 C (%) 80
MRA779
1.5 handbook, halfpage PL (W) 1.2
6 C 4
60
0.9
40
0.6
2
20
0.3
0 0 0.3 0.6 0.9 1.2
0 1.5 PL (W)
0
0
200
400 PD (mW)
600
Class-B; f = 900 MHz; VCE = 7.5 V; Ts 60 C.
Class-B; f = 900 MHz; VCE = 7.5 V; Ts 60 C.
Fig.5
Power gain and collector efficiency as functions of load power; typical values.
Fig.6
Load power as a function of drive power; typical values.
1996 May 09
5
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLT80
handbook, full pagewidth
50 input
C1
,,, ,, ,, ,,,
L1 L5 L6 L10 C2 L2 C3 DUT L7 C5 L3 L8 L9 R1 L4 C4 R2 C6
C8
50 output
C7
VCC
MBB649
Fig.7 Common emitter test circuit for class-B operation at 900 MHz.
List of components used in test circuit (see Figs 7 and 8) COMPONENT C1, C8 C2, C3 C4 C5, C7 C6 L1 L2, L7 L3, L8 L4, L9 L5 L6 L10 R1, R2 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 2.2); thickness 1 "; thickness of the copper sheet 35 m. 16 1996 May 09 6 DESCRIPTION type 9105 Voltronix KM10 trimmer film dielectric trimmer stripline; note 2 1 turn 0.4 mm copper wire on grade 3B core 6 turns enamelled 0.8 mm copper wire grade 3B Ferroxcube wideband HF choke stripline; note 2 stripline; note 2 stripline; note 2 metal film resistor 50 50 50 10 , 0.25 W length 8.4 mm width 4.85 mm length 20 mm width 4.85 mm length 21 mm width 4.85 mm internal dia. 3 mm 4312 020 36640 VALUE 0.6 to 10 pF 1.4 to 5.5 pF 50 length 13 mm width 4.85 mm 4330 030 32221 2222 809 09001 DIMENSIONS CATALOGUE No.
multilayer ceramic chip capacitor; note 1 100 pF multilayer ceramic chip capacitor; note 1 220 pF multilayer ceramic chip capacitor; note 1 1 nF
Philips Semiconductors
Product specification
UHF power transistor
BLT80
handbook, full pagewidth
140
strap
strap
80
rivets (14x) strap mounting screws (8x) strap
VCC L9 L4 C4 R1 L3 L2 L1 R2 L8 L7 L5 L6 C5 C2 C3 L10 C7 C8 C6
C1
MBB648
Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.
1996 May 09
7
Philips Semiconductors
Product specification
UHF power transistor
BLT80
handbook, halfpage
10 Zi () 8
MRA777
handbook, 30 halfpage
MRA778
ri
ZL () 25
RL
20 6 15 4 xi 2 10
5 XL
0 800
840
880
920
960
1000 f (MHz)
0 800
840
880
920
960 1000 f (MHz)
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts 60 C.
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts 60 C.
Fig.9
Input impedance as a function of frequency (series components); typical values.
Fig.10 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
10 Gp (dB) 8
MRA775
6
handbook, halfpage
4
Zi ZL
MBA451
2
0 800
840
880
920
960 1000 f (MHz)
Class-B; VCE = 7.5 V; PL = 0.8 W; Ts 60 C.
Fig.11 Power gain as a function of frequency; typical values.
Fig.12 Definition of transistor impedance.
1996 May 09
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
BLT80
handbook, full pagewidth
0.95 0.85
S 0.32 0.24
seating plane 6.7 6.3 3.1 2.9
0.1 S
B 4
0.2 M A
A
0.10 0.01
3.7 3.3
o
7.3 6.7
16 o max
16
1 1.80 max 10 o max 2.3 4.6
2 0.80 0.60
3 0.1 M B (4x)
MSA035 - 1
Dimensions in mm.
Fig.13 SOT223.
1996 May 09
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT80
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 May 09
10
Philips Semiconductors
Product specification
UHF power transistor
NOTES
BLT80
1996 May 09
11
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127061/1200/02/pp12 Document order number: Date of release: 1996 May 09 9397 750 00836

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